1 北京邮电大学电子工程学院, 北京 100876
2 中国联合网络通信集团有限公司, 北京 100048
3 中讯邮电咨询设计院有限公司郑州分公司, 河南郑州 450007
4 中兴通讯股份有限公司, 广东深圳 510000
5 中国铁塔股份有限公司河南省分公司, 河南平顶山 467035
为更好地表征 5G基站电磁辐射水平, 本文针对电磁辐射预测方法进行研究, 提出了一种基于广义回归神经网络 (GRNN)模型的基站电磁辐射环境表征方法, 对基站周围的理论最大辐射点接地平面处的瞬时宽带电场强度进行预测。在给定天线发射功率、5G基站与其理论最大辐射点的距离和数据传输时间的情况下, 利用 80%的数据作为训练集, 20%的数据作为测试集, 所得平均绝对百分比误差(MAPE)为 0.087 1, 运行时间为 3~5 min, 表现出较好的预测精确度和较快的运行速度。与其他模型进行对比, 预测精确度和求解效率大幅提高, 且随着基站周围区域面积增大, 优势愈发明显, 具有很好的场景适用性。
基站电磁辐射 GRNN模型 电场强度 电磁环境表征 electromagnetic radiation of base station GRNN model electric field strength electromagnetic environment characterization 太赫兹科学与电子信息学报
2023, 21(11): 1357
Author Affiliations
Abstract
1 Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China
2 Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy (Jilin University), Changchun 130012, China
The ultrafast dynamic process in semiconductor Ge irradiated by the femtosecond laser pulses is numerically simulated on the basis of van Driel system. It is found that with the increase of depth, the carrier density and lattice temperature decrease, while the carrier temperature first increases and then drops. The laser fluence has a great influence on the ultrafast dynamical process in Ge. As the laser fluence remains a constant value, though the overall evolution of the carrier density and lattice temperature is almost independent of pulse duration and laser intensity, increasing the laser intensity will be more effective than increasing the pulse duration in the generation of carriers. Irradiating the Ge sample by the femtosecond double pulses, the ultrafast dynamical process of semiconductor can be affected by the temporalinterval between the double pulses.11474129), the Research Fund for the Doctoral Program of Higher Education in China (grant no. 20130061110021) and the Project 2015091 Supported by Graduate Innovation Fund of Jilin University.
carrier carrier energy transfer energy transfer femtosecond laser femtosecond laser lattice lattice semiconductor semiconductor High Power Laser Science and Engineering
2016, 4(2): 02000e12
